OPC for Mask Aligner

Motivation:

Mask aligner lithography is being pushed to its limits in more and more applications (LED, Flat Panel Display, MEMS, 3D packaging). The use of OPC pattern processing is powerful in modification of light diffraction through the mask. OPC is thus used to enhance proximity printing.

Solution:

LAB is offering the desired simulation platform for mask aligner lithography. The intensity image and resist image are simulated fast, and with high accuracy. The use of layout operations such as biasing, shifting, boolean operations makes it easy to modify the layout and optimize shape, size and position of OPC features. The integrated layout editor allows the semi-automated optimization of the layout for the best match of the lithography result to the intended design. Changing different parameters allows the simulation of hundreds of different conditions in hours or even in minutes. Moreover, the process window analysis tool makes it easy to analyze the printability of the selected pattern.