Optimisation of relative dose exposure for critical features
Lithography processes are complex and require iterative calibration before achieving an optimal result. Specifically, many designs are sensitive to dose variations since these lead to the widening or narrowing critical dimensions (CD) within a layout. The characterisation of such behaviour can be time and cost-consuming, and thus, the simulation of an exposure avoids unwanted outcomes.
BEAMER provides a E-Beam module to simulate electron beam exposure of a device. This module simulates energy distribution of electrons and calculates the exposure result with high accuracy. Its combination with Loop module gives flexibility for modelling several conditions using variables. The flow is demonstrated to simulate the CD vs Dose sensitivity for an arbitrary feature in a standard layout.